带隙基准
电阻器
CMOS芯片
电子线路
电气工程
晶体管
双极结晶体管
电压基准
电压
材料科学
工程类
跌落电压
作者
Yuji Osaki,Takahisa Hirose,Nobutaka Kuroki,Masahiro Numa
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2013-06-01
卷期号:48 (6): 1530-1538
被引量:213
标识
DOI:10.1109/jssc.2013.2252523
摘要
This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18-μm CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub-BGR circuits corresponded to 100 and 52.5 nW.
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