Passivating Defects at the Bottom Interface of Perovskite by Ethylammonium to Improve the Performance of Perovskite Solar Cells

Abstract The interface of perovskite solar cells (PSCs) plays a significant role in influencing their performance, yet there is still scarce research focusing on their difficult‐to‐expose bottom interfaces. Herein, ethylammonium bromide (EABr) is introduced into the bottom interface and its passivation effects are studied directly. First, EABr can improve substrate wettability, which is beneficial for the perovskite‐film deposition. By lifting off the perovskite film spontaneously from the substrate, it is found that EABr can significantly reduce the amount of unreacted PbI 2 at the bottom interface. These PbI 2 crystals have been recently identified as a major defect source and degradation site for perovskite film. Meanwhile, EABr also lifts the valence band maximum at the bottom side of perovskite from ‐5.38 to ‐5.09 eV, facilitating better hole transfer. Such a improvement is also verified by the study of charge carrier dynamics. Through introducing EABr, all photovoltaic parameters of the inverted PSCs are improved, and their power conversion efficiency (PCE) increases from 20.41% to 21.06%. The study highlights the importance of direct characterization of the bottom interface for a better passivation effect.