化学机械平面化
苯并三唑
腐蚀
电偶腐蚀
泥浆
原电池
螯合作用
材料科学
被动性
化学工程
极化(电化学)
抛光
化学
冶金
无机化学
复合材料
物理化学
工程类
电气工程
作者
Chuanyun Wan,Jiaqi Liu,Xinyu Duan,Tao Sun
标识
DOI:10.1149/1945-7111/ad1838
摘要
Selective chelation and protective film formation were synergistically combined to achieve Co/Cu galvanic corrosion control. Chelating agent imionodisuccinic acid and protective film formation agent benzotriazole are strategically chosen for fulfilling the above proposed task in alkaline solution for Co barrier chemical mechanical planarization (CMP). Chronopotentiometry and linear dynamic potential polarization methods are used to investigate the thermodynamics and kinetics of Co and Cu corrosion. A synergistic control of Co/Cu corrosion was accomplished by judiciously balancing the power of selective chelation and protective film formation. This systematic approach can be expanded to systematically design other metal CMP slurries to fulfil the desired polishing performance.
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