铁电性
异质结
材料科学
单层
范德瓦尔斯力
光电子学
极化(电化学)
自旋电子学
纳米技术
凝聚态物理
铁磁性
化学
分子
物理化学
物理
有机化学
电介质
作者
Guogang Liu,Tong Chen,Guanghui Zhou,Zhonghui Xu,Xianbo Xiao
出处
期刊:ACS Sensors
[American Chemical Society]
日期:2023-03-27
卷期号:8 (4): 1440-1449
被引量:49
标识
DOI:10.1021/acssensors.2c02365
摘要
Nonvolatile electrical control is the core of future magnetoelectric nanodevices. In this work, we systematically explore both the electronic structures and transport properties of multiferroic van der Waals (vdW) heterostructures consisting of a ferromagnetic FeI2 monolayer and a ferroelectric In2S3 monolayer using density functional theory and the nonequilibrium Green's function method. The results reveal that the FeI2 monolayer can be reversibly switched between semiconducting and half-metallic properties by nonvolatile control of the In2S3 ferroelectric polarization states. Correspondingly, the proof-of-concept two-probe nanodevice based on the FeI2/In2S3 vdW heterostructure exhibits a significant valving effect by modulating the ferroelectric switching. Moreover, it is also found that the preference of nitrogen-containing gases such as NH3, NO, and NO2 for adsorption on the surface of FeI2/In2S3 vdW heterostructures strongly depends on the polarization direction of the ferroelectric layer. In particular, the FeI2/In2S3 heterostructure shows reversible capture behavior for NH3. As a result, the FeI2/In2S3 vdW heterostructure-based gas sensor demonstrates high selectivity and sensitivity. These findings may open up a new route for the application of multiferroic heterostructures to spintronics, nonvolatile memories, and gas sensors.
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