Voltage dependence of proximity effects in electron beam lithography

Intra line and inter line proximity effects and their dependence on beam voltage are explored via computer simulation of electron scattering, energy deposition, and subsequent development in electron-beam lithography processes. For thin resist films (?1 μm) on silicon substrates,the simulation predicts that smaller linewidths and gaps can be achieved without proximity correction at 10 kV, compared to 20 kV. Experimental confirmation of the predictions is presented.