Defects study of MOCVD grown β-Ga2O3films

Highly (-201) oriented β-Ga₂O₃ films prepared by metal-organic chemical vapor deposition on (0001) sapphire substrates, undergone different post annealing temperatures to study their resistivity under harsh environment. Both of Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy (TEM) results are exposing a harmony between oxygen vacancies and gallium interstitials. TEM characterization of samples determines a relationship between interstitials and formation of screw dislocations. Cathodoluminecsnece investigated under different applied voltages is found to be applicable to study chemistry of the bulk and surface of β-Ga₂O₃.