材料科学
化学气相沉积
钨
硅烷
沉积(地质)
化学工程
硅
薄膜
作者
N. Thomas,P. Suryanarayana,Elisabeth Blanquet,Constantin Vahlas,Roland Madar,Claude Bernard
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:1993-02-01
卷期号:140 (2): 475-484
被引量:20
摘要
This paper makes a systematic study of blanket and selective low pressure chemical vapor deposition (LPCVD) WSi 2 films from tungsten chlorides, silane, hydrogen, and argon on silicon as well as on patterned oxidized silicon substrates. Experiments were performed by varying the initial gaseous WCl 4 to SiH 4 ratio (Rx) or the deposition temperature (T d ). Initially, yield and CVD-phase diagrams of the W-Si-Cl-H-Ar chemical system were drawn, based on thermodynamic simulations. The deposition of pure WSi 2 phase and mixed solid phases involving W, W 5 Si 3 , WSi 2 , and Si was predicted to occur in relation to process parameters
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