X射线光电子能谱
硅
氧化物
分析化学(期刊)
臭氧
傅里叶变换红外光谱
二氧化硅
透射电子显微镜
红外光谱学
氧化硅
材料科学
红外线的
光谱学
化学
纳米技术
化学工程
光学
氮化硅
环境化学
有机化学
冶金
工程类
物理
量子力学
作者
Takeshi Ohwaki,Mayu Takeda,Yoshizo Takai
摘要
The structures of silicon native oxides formed in the SC-1, H 2 O 2 and wet ozone processes were characterized using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FT-IR). Spectral simulation was performed to clarify the FT-IR spectra, assuming that the native oxide was pure silicon dioxide. Effective medium theories were applied to understand deviations of the observed spectra from the calculated ones. The deviations between the native oxide thickness evaluated by XPS and the absolute thickness obtained by TEM were also discussed. These deviations can be explained if the void is incorporated in the native oxides and the interface between the native oxide and the basal silicon obtained by the wet ozone process has a relatively smooth surface and a structure more similar to that of pure silicon dioxide, compared with that obtained by SC-1 or H 2 O 2 treatment.
科研通智能强力驱动
Strongly Powered by AbleSci AI