材料科学
播种
空位缺陷
起爆
钻石
硅
纳米晶材料
纳米技术
纳米晶
复合材料
光电子学
爆炸物
结晶学
航空航天工程
有机化学
化学
工程类
作者
Štěpán Stehlík,M. Varga,Pavla Štenclová,Lukáš Ondič,Martin Ledinský,J. Pangrác,Ondřej Vaněk,Jan Lipov,Alexander Kromka,Bohuslav Rezek
标识
DOI:10.1021/acsami.7b14436
摘要
substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.
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