Extremely Ultra -Shallow p+-n Boron-Deposited Silicon Diodes Applied to DUV Photodiodes

In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p+-n diodes.