Multilayer Structures Based on Doped Graded-Band-Gap Semiconductors: Features of Energy Band Diagram

The paper theoretically examines the distinctive features of the energy band gap diagram of symmetric multilayer structures based on uniformly doped graded-band-gap semiconductors with constant gradients of energy band gap and electron affinity. By means of analytical and numerical calculations, it is shown that the energy band diagram of such multilayer structures substantially depends on the layer thickness, with its largest modification taking place when the layer thickness is of the order of the structure Debye screening length.