Low breakdown voltage Schottky diode as voltage regulator

Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 mΩcm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of breakdown voltage.