Efficient 3-D Simulation of Avalanche Breakdown and Transport in Wide-Area IGBT Corners

We present a novel methodology to perform reliable and efficient three-dimensional (3D) wide-area simulations of avalanche breakdown in the corners of insulated gate bipolar transistors (IGBTs), based on approximations in the trench-gate and source contact geometries, coupled to a careful shaping of the simulation domain. The 3D approach features better agreement with experimental data with respect to 2D models, while providing new information on the spatial distribution of electric field and impact ionization rates. We also show that the edge impact ionization results in current crowding at the first contact and investigate the phenomenon. The developed tool can support the design and optimization of next-generation IGBTs with improved avalanche robustness and reliability.