互连
工程类
数码产品
引线键合
过程(计算)
集成电路封装
钥匙(锁)
建筑
电子包装
模具(集成电路)
计算机体系结构
纳米电子学
电气工程
计算机科学
集成电路
柔性电子器件
电子工程
嵌入式系统
制造工程
混合动力系统
系统工程
过程集成
在制品
包装工程
系统集成
热压连接
作者
Pavanbabu Arjunamahanthi,Himanandhan Reddy Kottur,Shajib Ghosh,Patrick Craig,M. Shafkat M. Khan,Liton Kumar Biswas,Istiaq Firoz Shiam,Navid Asadizanjani,Robert Patti,Charles Woychik
标识
DOI:10.37665/smctrsc40814
摘要
ABSTRACT The transition from monolithic System-on-Chip (SoC) designs to chiplet-based architectures has redefined the landscape of advanced electronics packaging, driven by demands for increased functionality, heterogeneous integration, and improved performance per watt. Central to this shift is the development of high-density, low-latency interconnect technologies that can support multi-chiplet integration within a single package. Among these, hybrid bonding has emerged as a key assembly technique, offering superior electrical, thermal, and mechanical performance compared to conventional micro-bump and thermocompression bonding methods. Hybrid bonding enables direct copper-to-copper (Cu-Cu) and dielectric-to-dielectric interfaces between dies or chiplets at sub-10 μm pitches, dramatically increasing interconnect density while reducing parasitic resistance, capacitance, and interconnect latency. This paper serves as a technical roadmap and process assessment for the integration of hybrid bonding in fine pitch chiplet packaging.
科研通智能强力驱动
Strongly Powered by AbleSci AI