材料科学
响应度
吸附
解吸
化学气相沉积
薄膜
光电子学
光电导性
光电探测器
量子效率
分子
钒
纳米技术
沉积(地质)
量子阱
二硫化钼
水蒸气
响应时间
量子
调制(音乐)
化学工程
作者
Zhihua Cheng,Tengfei Lu,Chao-Yu Chen,Hualong Tao,Zhiqiang Li,Yao Liang,Yongqing Cai,Tianming Lv,Zhiguang Sun,Liyan Zhang,Y Wang,Baoting Quan,Zheng Wei,Z. H. Zhang
标识
DOI:10.1002/aelm.202500610
摘要
ABSTRACT 2D semiconducting H‐phase vanadium disulfide (VS 2 ) has attracted significant research interest due to its exceptional potential in electronics, optoelectronics, spintronics, and valleytronics. In this work, VS 2 thin films are synthesized via chemical vapor deposition for the application of photodetectors, revealing a tunable dual‐photoconductivity effect induced by CO 2 adsorption and light‐assisted desorption. CO 2 adsorption led to negative photoconductivity, achieving a remarkable responsivity of ∼2680 A/W and an ultra‐high external quantum efficiency of ∼1.3 × 10 6 %. In contrast, VS 2 photodetectors free from CO 2 adsorption exhibited stable positive photoconductivity, with a maximum responsivity and external quantum efficiency of ∼0.11 A/W and ∼30.47%, respectively. First‐principles calculations demonstrate that CO 2 exhibits superior adsorption and desorption capabilities on the VS 2 surface compared to other ambient gas molecules (e.g., N 2 , O 2 , and H 2 O). This work highlights the profound influence of gas adsorption on the photoconductivity behavior of VS 2 thin films, providing critical insights into their optoelectronic properties and enabling non‐destructive modulation for advanced device applications.
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