铟
材料科学
化学气相沉积
发光二极管
二极管
分析化学(期刊)
电阻率和电导率
形态学(生物学)
电子迁移率
模板
表面粗糙度
兴奋剂
光电子学
宽禁带半导体
活化能
金属有机气相外延
表面光洁度
氮化铟
氮化物
外延
纳米技术
化学
图层(电子)
复合材料
有机化学
色谱法
生物
遗传学
工程类
电气工程
作者
Evyn L. Routh,Mostafa Abdelhamid,P. C. Colter,N. A. El-Masry,S. M. Bedair
摘要
Using the semibulk approach, p-InxGa1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with an In content of ∼15.2% increased by two orders of magnitude from 5.22 × 1017 to 5.28 × 1019 cm−3. The resistivity and mobility of the templates decreased gradually from 3.13 Ω · cm and 3.82 cm2/V s for p-GaN to 0.24 Ω · cm and 0.48 cm2/V s for p-SB with an In content of 15.2%. Temperature dependent Hall measurements were conducted to estimate the activation energy of the p-SB template. The p-SB with the In content of ∼15.2% is estimated to have an activation energy of 29 meV. These heavily doped p-SB templates have comparable material qualities to that of GaN. The atomic force microscopy height retraces of p-SB films show device quality surface morphology, with root mean square roughness ranging from 2.53 to 4.84 nm. The current results can impact the performances of several nitride-based devices, such as laser diodes, LEDs, solar cells, and photodetectors.
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