石墨烯
拉曼光谱
材料科学
化学气相沉积
正交晶系
扫描电子显微镜
Crystal(编程语言)
铜
基质(水族馆)
表面扩散
薄膜
结晶学
纳米技术
晶体结构
化学
光学
复合材料
物理化学
冶金
物理
地质学
吸附
海洋学
程序设计语言
计算机科学
作者
Furkan Türker,Ömer R. Çaylan,Naveed Mehmood,T. Serkan Kasırga,Cem Sevik,Göknur Cambaz Büke
摘要
Abstract In this study, we present an investigation on the growth of thin Mo 2 C crystals via chemical vapor deposition using CH 4 . Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy(AFM), and Raman spectroscopy studies show that the morphology and the thickness of Mo 2 C crystals are strongly affected by the impurities in the system, the thickness of the copper substrate, and the graphene presence on Cu surface prior to Mo 2 C formation. Our studies show that during the CVD process, orthorhombic Mo 2 C crystals grow along the [100] direction on two different regions: directly on Cu surface or on graphene covered regions. Mo 2 C crystals that form on graphene are found to be thinner and less defective compared to the ones formed on the Cu surface. This is attributed to graphene acting as an additional diffusion barrier for Mo atoms diffusing through the copper. In addition to the graphene beneath the Mo 2 C crystal, Raman studies indicate that graphene may grow also on top of the Mo 2 C crystal, forming a graphene/Mo 2 C/graphene sandwich structure which may offer interesting properties for electronic applications.
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