材料科学
光电探测器
光电子学
光电流
异质结
响应度
纳米线
量子效率
石墨烯
双层
紫外线
噪声等效功率
纳米技术
膜
遗传学
生物
作者
Shonak Bansal,Krishna Prakash,Kuldeep Sharma,Neha Sardana,Sanjeev Kumar,Neena Gupta,Arun K. Singh
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2020-07-14
卷期号:31 (40): 405205-405205
被引量:56
标识
DOI:10.1088/1361-6528/ab9da8
摘要
This paper presents three self-powered photodetectors namely, p+-bilayer graphene (BLG)/n+-ZnO nanowires (NWs), p+-BLG/n+-Si NWs/p--Si and p+-BLG/n+-ZnO NWs/p--Si. The Silvaco Atlas TCAD software is utilized to characterize the optoelectronic properties of all the devices and is validated by analytical modeling. The proposed dual-junction photodetectors cover broadband spectral response varying from ultraviolet to near-infrared wavelengths. The dual-heterojunction broadband photodetector exhibits photocurrent switching with the rise and fall time of 1.48 and 1.27 ns, respectively. At -0.5 V bias, the highest external quantum efficiency, photocurrent responsivity, specific detectivity, and the lowest noise equivalent power of 71%, 0.28 A W-1, 4.2 × 1012 cmHz1/2 W-1, and 2.59 × 10-17 W, respectively, are found for the dual-heterojunction device with a wavelength of 480 nm at 300 K. The proposed nanowires based photodetectors offer great potential to be utilized as next-generation optoelectronic devices.
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