化学气相渗透
化学气相沉积
碳化硅
硅
氢
化学工程
沉积(地质)
等离子体增强化学气相沉积
大气温度范围
气体成分
材料科学
多孔性
化学
碳纤维
分解
纳米技术
热力学
复合材料
复合数
有机化学
冶金
工程类
古生物学
物理
生物
沉积物
作者
Anthony Desenfant,Guillaume Laduye,Gérard L. Vignoles,Georges Chollon
标识
DOI:10.1016/j.jiec.2020.10.029
摘要
The chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosilane (VTS) was studied to identify a range of conditions leading to pure crystalline SiC. The deposition rate was recorded to evidence the various deposition regimes. Gas phase, elemental analyses and infiltration tests were also performed. Three distinct chemical reaction regimes were identified. In CVD conditions, carbon is co-deposited at low temperature while VTS is only partially decomposed. In infiltration conditions, the composition switches to pure SiC inside the porous substrate because of a depletion of reactive hydrocarbon species. Competing heterogeneous reactions are responsible for a hysteresis versus temperature, in both deposition rate and composition of the deposit. The high temperature domain is the most suitable to deposit pure crystalline SiC in CVD conditions. Hydrogen dilution strongly accelerates the homogeneous decomposition of VTS as compared to argon. Assumptions on the reaction mechanism were proposed describing the chemistry of this precursor.
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