CVD 반응로 내부 회전 원판 주위의 열 및 물질 전달 특성 연구

The transport properties of the convective flow motion in an atmospheric pressure CVD reactor(APCVD) are investigated using a numerical method. For the purpose of a uniform deposition rate on a substrate with a diameter 12 inches, a combinatorial optimization was carried out concerning the pressure, the mass-flow rate and the temperature. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Using the Nusselt and Sherwood number, the heat and mass transfer performance on the susceptor are calculated. We also introduced an index for relative growth rate(RGR) to measure the flatness of the epilayer. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.