Blue Light Emission and Ultraviolet Light Emission From Silicon Oxynitride film Prepared by PECVD

Silicon oxynitride films are prepared by plasma enchanced chemical vapor deposition (PECVD) mothod. The reactant is de-posited on the crystal silicon wafers and quartz. Annealing at temperature 600℃, 700℃, 800℃, 900℃ for half an hour, oxidation at temper-ature 600℃, 700℃, 800℃, 900℃, 1000℃ for twenty minutes, strong blue light (440nm) and ultraviolet light (360nm) emission from silicon oxynitride film at room temperature have been observed. The PL mechanism is analyzed and discussed.