Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

Gallium nitride (GaN) is an advanced semiconductor primarily known for its current applications in lasers and high-power electronics. With the availability of various growth techniques for both thin films and nanomaterials, which result in high-purity materials, and its exceptional electrical and optical properties, GaN stands in a unique position for potential expansion into other fields, particularly in the realm of quantum technologies. In recent years, there have been notable advancements in GaN quantum dots, nanowires, and more recently color centers, revealing promising optical and spin quantum properties that could pave the way for further developments in the future. This review offers a comprehensive review of recent studies focused on the quantum properties of GaN materials, particularly in terms of single-photon emission and the characteristics of color centers. While GaN is still in the early stages of assessment compared to other emerging quantum materials, we present a perspective on its unexplored potential, which holds the promise of unlocking new opportunities for the advancement of quantum technologies.