Enhanced nonlinear absorption and photoluminescence properties of Zn, Fe, Cu, V and Ni doped MoO3 transition metal oxide thin films

Abstract In this study, the effect of the dopant element on the linear, nonlinear absorption and optical limiting properties of ultrasonically sprayed MoO 3 thin films is presented. The linear optical results showed an increase with the density of the defect states in the bandgap with doping, in conjunction with a decrease in bandgap energy and an increase in Urbach energy. Broad photoluminescence emissions are detected in the range of 350 and 600 nm, decreasing in intensity by doping. To reveal the defect states effects’ on the nonlinear absorption (NA) behavior, OA Z-scan data were analyzed with two theoretical models considering only two photon absorption (2PA) (model 1), and one photon absorption (OPA), 2PA and free carrier absorption (model 2). The NA behavior is observed and found to get enhanced by increasing input intensity and doping atoms due to generation of new oxygen vacancies and formation of further defect states. The NA coefficient values of the thin films in model 2 are 100 times higher than that of 2PA coefficient values in model 1. This result revealed the strong effect of defect states on the NA behavior. Among the investigated dopant atoms, Cu resulted in enhanced NA due to the higher density of defect states. While the genuine 2PA is the dominant NA mechanism for V and Fe doped MoO 3 thin films, OPA and 2PA are the dominant NA mechanisms for the Ni, Zn and Cu doped MoO 3 thin films due to their higher concentration of defect states. Cu-doped MoO 3 thin film has a lower optical limiting threshold of 0.026 mJ/cm 2 due to its enhanced NA behavior. Considering the results obtained, this study opens the door to the potential of doped MoO 3 thin films to be used as optical limiters in the visible wavelength region.