Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Abstract Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiC x :H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H 2 /Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H 2 /Ar flow ratio R H have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiC x :H thin film can be prepared while the properties are controllable through adjusting R H . In the case of R H = 0.75, the maximum dark conductivity (6.42 S cm −1 ) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiC x :H thin films.