Fast short‐circuit protection under current imbalance condition for multi‐paralleled SiC‐MOSFETs

Abstract This paper proposes methodology and gate drive circuit that can immediately detect short‐circuit (SC) of multiparalleled SiC‐MOSFETs even under current imbalance condition. Proposed method detects SC current using an integration circuit that can sense di / dt . The detection level of SC current can be adjusted to a desired value regardless of the number of SiC‐MOSFETs connected in parallel. The effectiveness of the proposed approach was experimentally validated for four‐paralleled SiC‐MOSFETs under extreme current imbalance in SC condition. SC was detected within 0.5 μs and all SiC‐MOSFETs were protected without destruction at most 2.2 μs after the onset of SC, for all types of SC 1, 2, and 3.