光电二极管
响应度
光电子学
双极扩散
光电流
材料科学
场效应
光探测
带宽(计算)
极性(国际关系)
光电探测器
物理
化学
计算机科学
电子
电信
生物化学
量子力学
细胞
作者
Jintao Fu,Hao Jiang,Changbin Nie,Feiying Sun,Linlong Tang,Yunjie Li,Zhancheng Li,Wen Xiong,Jun Yang,Xin Li,Danhong Zhou,Jun Shen,Shuanglong Feng,Haofei Shi,Paul Mulvaney,Xingzhan Wei
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-05-30
卷期号:23 (11): 4923-4930
被引量:2
标识
DOI:10.1021/acs.nanolett.3c00728
摘要
Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to be inherently either unipolar or ambipolar in its response. However, conventionally, once a field-effect phototransistor has been fabricated, its polarity cannot be changed. Herein, a polarity-tunable field-effect phototransistor based on a graphene/ultrathin Al2O3/Si structure is demonstrated. Light can modulate the gating effect of the device and change the transfer characteristic curve from unipolar to ambipolar. This photoswitching in turn produces a significantly improved photocurrent signal. The introduction of an ultrathin Al2O3 interlayer also enables the phototransistor to achieve a responsivity in excess of 105 A/W, a 3 dB bandwidth of 100 kHz, a gain-bandwidth product of 9.14 × 1010 s-1, and a specific detectivity of 1.91 × 1013 Jones. This device architecture enables the gain-bandwidth trade-off in current field-effect phototransistors to be overcome, demonstrating the feasibility of simultaneous high-gain and fast-response photodetection.
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