Loss Analysis of Fully‐Textured Perovskite Silicon Tandem Solar Cells: Characterization Methods and Simulation toward the Practical Efficiency Potential

串联 钙钛矿(结构) 材料科学 光伏系统 表征(材料科学) 光致发光 光电子学 堆栈(抽象数据类型) 电压 等效串联电阻 计算机科学 纳米技术 化学 电气工程 工程类 复合材料 程序设计语言 结晶学
作者
Oussama Er‐raji,Christoph Messmer,Alexander J. Bett,Oliver Fischer,S. Kasimir Reichmuth,Florian Schindler,Martin Bivour,Oliver Schultz‐Wittmann,Juliane Borchert,Martin Hermle,Jonas Schön,Friedemann D. Heinz,Martin C. Schubert,Patricia S. C. Schulze,Stefan W. Glunz
出处
期刊:Solar RRL [Wiley]
卷期号:7 (24) 被引量:14
标识
DOI:10.1002/solr.202300659
摘要

Optimally enhancing the performance of perovskite silicon tandem solar cells comes with accurate identification of loss origins in the device in combination with optoelectrical device simulations assessing the respective efficiency gains to prioritize optimization pathways. Herein, various characterization methods, namely, spectrally resolved photoluminescence (PL), transient‐PL, PL‐based implied open‐circuit voltage (i V OC ) imaging, spectrometric characterization, and Suns‐ V OC measurements are combined to quantify current density–voltage ( jV ) photovoltaic metric losses of a fully‐textured perovskite silicon tandem solar cell (26.7% efficiency). The extracted device characteristic parameters are then used as a reference for the comprehensive optoelectrical Sentaurus simulation model which precisely reproduces the experimentally obtained optical and electrical solar cell characteristics, considering mobile ion dynamics. Subsequently, starting from the current device design, the authors alleviate one step at a time the loss constraints and show the impact of each loss channel on the efficiency, identifying the three major ones to be at the: 1) perovskite/C 60 interface (−4.6% abs ) , 2) the series resistance (−2.9% abs ), and 3) light management (−2.1% abs ), which limit the V OC , fill factor, and j SC of the device, respectively. Furthermore, it is demonstrated that a practical efficiency potential of 39.5% can be regarded as a practical limit for the presented tandem device architecture.

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