Reconfigurable skyrmion logic gates and diodes in the same synthetic antiferromagnetic nanotrack based on potential well inducting effect

Abstract Magnetic skyrmions are nanoscale spin configurations with topological protection properties, which have broad application potential in the next generation of spintronic devices. Here, we report on the current-driven dynamics of skyrmions in synthetic antiferromagnetic (SAF) nanotracks with voltage-controlled magnetic anisotropy. This study reveals that, compared to a single skyrmion, when two skyrmions are created simultaneously, the inductive effect of the potential well generated by the voltage gate on the skyrmions is partially counteracted by the interaction between the skyrmions, resulting in a reduction in the critical current required for the skyrmions to pass the voltage gate. Moreover, the critical current required for the forward moving skyrmions to depin from the voltage gate is significantly lower than that required for the reverse moving skyrmions. Based on the dynamic behavior of skyrmions, we have proposed and achieved the skyrmion logic AND, OR, NOT, NAND, NOR gates and the diodes on the same SAF nanotrack by micromagnetic simulation, in which the logic NOT, NAND, and NOR gates are realized in a reconfigurable way. Furthermore, we have also investigated the feasibility of reconfigurable logic gates and diodes at finite temperatures. Our results are beneficial for the design and development of non-volatile spintronic devices with integrated multifunctionality and ultra-low energy consumption.