纳米线
纤锌矿晶体结构
凝聚态物理
拉曼散射
散射
非弹性散射
壳体(结构)
X射线拉曼散射
拉曼光谱
量子点
光谱学
量子阱
材料科学
物理
电子
半导体
原子物理学
激光器
光学
纳米技术
光电子学
衍射
量子力学
复合材料
作者
Sebastián Meier,Paulo E. Faria,Ferdinand Haas,Emma-Sophia Heller,Florian Dirnberger,Viola Zeller,Tobias Korn,Jaroslav Fabian,Dominique Bougeard,Christian Schüller
出处
期刊:Physical review
[American Physical Society]
日期:2021-12-22
卷期号:104 (23)
被引量:6
标识
DOI:10.1103/physrevb.104.235307
摘要
The observation of electronic Raman scattering in one-dimensional semiconductors has so far been limited to arrays of laterally structured quantum wells. Recent progress in the growth of core-shell nanowires has opened the possibility to reach the quantum confinement regime for single nanowires. Here, the authors present measurements of the one-dimensional subband structure of single wurtzite-phase GaAs nanowires by resonant Raman spectroscopy. The obtained energetic distances between consecutive electron or hole subbands are nicely reproduced by realistic k∙p band structure calculations.
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