Lv11
38 积分 2025-08-05 加入
A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss
2小时前
待确认
A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss
6天前
已完结
(Invited) High-Speed Plasma Etching of SiC Wafer Toward Backside Thinning
12天前
已完结
Integration of Temperature and Current Sensors in 4H-SiC VDMOS
13天前
已完结
Investigation on Improving Short-Circuit Characteristic of 1200-V Planar-Gate SiC MOSFETs Using Enhanced N-Buffer Design
13天前
已完结
The effects of sequential annealing in NO and wet-O2 on interfacial properties and reliability of 4H-SiC (0001) MOS devices
17天前
已完结
Chemical-assisted laser ablation coupled with ultrasonic vibration for enhanced SiC wafer thinning
19天前
已完结
Tuning the interfacial properties of stacked gate dielectrics on silicon carbide by inserting h-BN layer
20天前
已完结
Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective
24天前
已完结
Local Lifetime Control in 4H-SiC by Proton Irradiation
24天前
已完结
皖公网安备34019202002308
