Lv21
110 积分 2025-08-05 加入
A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor
1小时前
已完结
The effects of sequential annealing in NO and wet-O2 on interfacial properties and reliability of 4H-SiC (0001) MOS devices
1个月前
已完结
SiC POWER DEVICES AND RELATED ROBUSTNESS AND RELIABILITY ASPECTS
1个月前
已关闭
Predeposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC
1个月前
已完结
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