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144 积分 2026-02-26 加入
Growth mechanisms and characteristics of near-interface traps in SiC/SiO2 interfaces for next generation power devices: A short review
17天前
已完结
Boron-doped sacrificial oxidation for low interface state density and enhanced stability in SiO2/4H-SiC MOS capacitors
28天前
已完结
Threshold voltage and channel mobility in counter-doped SiC p-channel MOSFETs with nitrided gate oxides
1个月前
已完结
Generalizations of multiple trapping
1个月前
已完结
Effect of texture on 4H–SiC substrate surface on film growth: A molecular dynamics study
2个月前
已完结
Impact of electron and hole trapping on gate reliability of planar SiC MOSFETs
2个月前
已完结
Micropores governed high-temperature oxidation behavior of Cr coatings: Kinetics analysis and phase-field modeling
3个月前
已完结
Low-resistance ohmic contacts on p-type homoepitaxial 3C-SiC by Al ion implantation with different metal structures
3个月前
已完结
Deformation of 4H-SiC: The role of dopants
4个月前
已完结
Polytypic transformation behavior from 4H-SiC to 3C-SiC during high-speed scratching of single crystalline silicon carbide
4个月前
已完结
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