Lv2
188 积分 2022-02-09 加入
Using compact model to verify IGZO RO performance for engineering application
17天前
已完结
Physics-Based SPICE Model of Slant Field Plate GaN HEMTs
21天前
已完结
Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model
21天前
已完结
Compact Modeling Solutions for Advanced Semiconductor Devices
22天前
已关闭
Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)
24天前
已完结
The Improvement of ASM GaN Model Applied to Multi-temperature Bias in AlGaN/GaN HEMT Devices
1个月前
已完结
An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate
1个月前
已完结
1250 V and 1700 V GaN HEMTs for 800 VDC AI Data Center Architecture
2个月前
已完结
High-Performance 1200-V p-GaN Gate HEMT on Standard 650-V GaN-on-Si Epi-Wafer
2个月前
已完结
Failure mechanisms of cascode GaN-based high electron mobility transistors under off-state breakdown
2个月前
已完结
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