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406 积分 2025-07-04 加入
High-temperature N ion implantation for performance-enhanced current-blocking layers in β-Ga2O3
10天前
已完结
Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β -Ga2O3
1个月前
已完结
Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β -Ga2O3
1个月前
已完结
Practical guide for inelastic mean free paths, effective attenuation lengths, mean escape depths, and information depths in x-ray photoelectron spectroscopy
1个月前
已完结
High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies
1个月前
已完结
Band bending and surface defects in β-Ga2O3
1个月前
已完结
High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
1个月前
已完结
High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
1个月前
已完结
Development of Materials Integration for Laser Gain Media: Single Crystals and Ceramic (Polycrystalline) Materials and Applications
1个月前
已完结
Understanding x-ray diffraction of nonpolar gallium nitride films
1个月前
已完结
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