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35 积分 2020-03-28 加入
Investigation of trapping dynamics and defect evolution in 150 nm GaN-on-SiC HEMTs under early X-band RF stress
1天前
已完结
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
1天前
已完结
Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD
6天前
已完结
Correlations between spatially resolved Raman shifts and dislocation density in GaN films
6天前
已完结
Unveiling the Phase Evolution of Quaternary Iron-Group Metal Nitrides through High-Pressure Directed Synthesis
3个月前
已关闭
Micro-Raman spectroscopy of bending stresses in β-Ga2O3(001) wafer
4个月前
已完结
Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga2O3 films
4个月前
已关闭
Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope
9个月前
已完结
Prediction of Temperature‐Dependent Stress in 4H‐SiC Using In Situ Nondestructive Raman Spectroscopy Characterization
9个月前
已完结
Stress effects on the Raman spectrum of an amorphous material: Theory and experiment ona-Si:H
10个月前
已完结
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