Lv73
3320 积分 2020-08-17 加入
Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate
3天前
已完结
Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template
21天前
已完结
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer
22天前
已完结
Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS
1个月前
已完结
Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate
1个月前
已完结
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer
1个月前
已完结
Characterization of AlXGa1−XN/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance–Voltage and Current–Voltage
1个月前
已完结
Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
2个月前
已完结
A survey of Gallium Nitride HEMT for RF and high power applications
2个月前
已完结
N-polar GaN: Epitaxy, properties, and device applications
2个月前
已完结
Delamination behavior of lithium-ion battery anodes: Influence of drying temperature during electrode processing
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