Lv7
5000 积分 2020-08-17 加入
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
9天前
已完结
Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
9天前
已完结
Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation
12天前
已完结
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
29天前
已完结
Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors
1个月前
已完结
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
2个月前
已完结
Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging
3个月前
已完结
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V
3个月前
已完结
Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
3个月前
已完结
1kV Vertical Breakdown Voltage AlGaN/GaN HEMTs on Si with AlN and AlGaN/AlN Superlattice Buffer Engineering
4个月前
已完结
Delamination behavior of lithium-ion battery anodes: Influence of drying temperature during electrode processing
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