Lv7
4980 积分 2020-08-17 加入
Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
1天前
已完结
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P out = 41 W/mm and f T ×BV = 31 THz•V
1个月前
已完结
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P out = 41 W/mm and f T ×BV = 31 THz•V
1个月前
已完结
Effect of resist sensitivity ratio on T-gate fabrication
1个月前
已完结
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
3个月前
已关闭
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
4个月前
已完结
High-temperature operation of group-III nitride high-electron-mobility transistors
5个月前
已完结
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
7个月前
已完结
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
9个月前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
9个月前
已完结
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