Lv7
5000 积分 2020-08-17 加入
Harnessing next-generation GaN semiconductors for the future of 6G communications: a review
26天前
已完结
Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
1个月前
已完结
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
1个月前
已完结
Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
1个月前
已完结
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P out = 41 W/mm and f T ×BV = 31 THz•V
3个月前
已完结
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P out = 41 W/mm and f T ×BV = 31 THz•V
3个月前
已完结
Effect of resist sensitivity ratio on T-gate fabrication
3个月前
已完结
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
5个月前
已关闭
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
6个月前
已完结
High-temperature operation of group-III nitride high-electron-mobility transistors
6个月前
已完结
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