Lv7
5000 积分 2020-08-17 加入
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
9小时前
求助中
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
1个月前
已完结
High-temperature operation of group-III nitride high-electron-mobility transistors
1个月前
已完结
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
4个月前
已完结
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
5个月前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
5个月前
已完结
GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements
6个月前
已完结
Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon
6个月前
已完结
Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications
6个月前
已关闭
High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current
7个月前
已完结
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