Lv7
5000 积分 2020-08-17 加入
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
1个月前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
1个月前
已完结
GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements
2个月前
已完结
Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon
2个月前
已完结
Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications
2个月前
已关闭
High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current
3个月前
已完结
Understanding Interfaces in AlScN/GaN Heterostructures
3个月前
已完结
Study of InGaAs/InAlAs avalanche photodiodes grown on InP
4个月前
已完结
InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer
4个月前
已完结
Quantum dot lasers at 300 mm for silicon photonics and datacenter optical interconnect applications
5个月前
已关闭
Delamination behavior of lithium-ion battery anodes: Influence of drying temperature during electrode processing
皖公网安备34019202002308
