Lv7
4990 积分 2020-08-17 加入
GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements
8小时前
已完结
Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon
19天前
已完结
Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications
21天前
已关闭
High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current
1个月前
已完结
Understanding Interfaces in AlScN/GaN Heterostructures
1个月前
已完结
Study of InGaAs/InAlAs avalanche photodiodes grown on InP
2个月前
已完结
InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer
2个月前
已完结
Quantum dot lasers at 300 mm for silicon photonics and datacenter optical interconnect applications
2个月前
已关闭
CMOS compatible III–V nano-ridge lasers
2个月前
已关闭
Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate
2个月前
已完结
Delamination behavior of lithium-ion battery anodes: Influence of drying temperature during electrode processing
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