Lv7
5000 积分 2020-08-17 加入
Effect of resist sensitivity ratio on T-gate fabrication
7小时前
已完结
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
1个月前
已关闭
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
3个月前
已完结
High-temperature operation of group-III nitride high-electron-mobility transistors
3个月前
已完结
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
5个月前
已完结
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
7个月前
已完结
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
7个月前
已完结
GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements
8个月前
已完结
Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon
8个月前
已完结
Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications
8个月前
已关闭
皖公网安备34019202002308
