| 标题 |
 Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors |
| 网址 | |
| DOI | |
| 其它 |
期刊：Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 作者：Hideki Hasegawa; Takanori Inagaki; Shinya Ootomo; Tamotsu Hashizume 出版日期：2003-08-08 |
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