Lv11
100 积分 2025-05-26 加入
Formation and stability of ammonium fluorosilicate during etching of SiN x in CH2F2/Ar and SF6/H2 plasmas
15天前
已完结
Hydrogen bond-mediated activation of HF in SiO2 thermal dry etching: A first-principles study of catalytic additives
15天前
已关闭
Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma
1个月前
已完结
Effect of gas additives on reaction barriers in cryo etching of silicon oxide and nitride
1个月前
已关闭
Neutral transport during etching of high aspect ratio features
1个月前
已完结
An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases
1个月前
已完结
Reaction mechanism for HF based cryogenic plasma etching of SiO2
1个月前
已关闭
Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal
1个月前
已完结
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
2个月前
已完结
Investigation of surface reactions of etched SiN films using HF/PF3 gas mixture plasma under cryogenic conditions via in-line XPS: The role of ammonium salts in etch rate enhancement
3个月前
已完结