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1250 积分 2025-01-23 加入
Influence of deep reactive ion etching process parameters on etch selectivity and anisotropy in stacked silicon substrates for fabrication of comb-type MEMS capacitive accelerometer
1小时前
已完结
In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas
6小时前
已完结
Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing
4天前
已完结
Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication
4天前
已完结
Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates
5个月前
已完结
Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer
8个月前
已完结
Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
8个月前
已完结
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