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104 积分 2025-05-20 加入
Channeling step shielding MOSFET design for improved short-circuit withstand time and UIS energy in 1200 V SiC devices
18分钟前
求助中
4H–SiC trench MOSFET with deep P-well using channeling implantation
19分钟前
已完结
Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET
16天前
已完结
Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET
30天前
已完结
Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling
1个月前
已完结
Some aspects on ruggedness of SiC power devices
1个月前
已完结
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
2个月前
已完结
Ionization rates and critical fields in 4H silicon carbide
2个月前
已完结
Impact ionization coefficients of 4H silicon carbide
2个月前
已完结
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