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44 积分 2025-05-20 加入
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
10天前
已完结
Ionization rates and critical fields in 4H silicon carbide
10天前
已完结
Impact ionization coefficients of 4H silicon carbide
10天前
已完结
Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
10天前
已完结
Evaluation of SiC MOSFET power modules under unclamped inductive switching test environment
1个月前
已完结
Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination
2个月前
已完结
Investigation of Degradation and Failure Mechanism in 1200-V Planar SiC MOSFET Under Statical Accelerated Lifetime Test
2个月前
已完结
Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness
2个月前
已完结
SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability
2个月前
已完结
GaN Based p-n Structures Grown on SiC Substrates
3个月前
已关闭
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