Lv6
2950 积分 2024-01-16 加入
An extended Langmuir model for adsorption of gas mixtures on heterogeneous surfaces
4天前
已完结
Growth and characterization of nitrogen-doped polycrystalline 3C-SiC thin films for harsh environment MEMS applications
1个月前
已完结
THE ADSORPTION OF GASES ON PLANE SURFACES OF GLASS, MICA AND PLATINUM
2个月前
已完结
Switching of n- and p-type doping with partial pressure of oxygen gas on few layers MoS2-field effect transistor
2个月前
已完结
A Survey of Wide Bandgap Power Semiconductor Devices
4个月前
已完结
Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
4个月前
已完结
Epitaxial SiC Development for High Nitrogen Incorporation
4个月前
已完结
Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide
4个月前
已完结
Observation and Suppression of Growth Pits Formed On 4H-SiC Epitaxial Films Grown Using Halide Chemical Vapor Deposition Process
4个月前
已完结
Effect of the N-doping concentration on the formation of the wide carrot defect in 4H-SiC homoepitaxial layer grown by trichlorosilane (TCS) as silicon precursor
4个月前
已完结
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