Lv7
3530 积分 2024-01-16 加入
High-quality 4H–SiC epitaxial layers grown on 200-mm substrates
2个月前
已完结
Reduction of pits density on the surface of 4H-SiC homoepitaxial layer
2个月前
已完结
A kinetic analysis of nitrogen incorporation characteristics in 4H-SiC epitaxial layers
2个月前
已完结
SiC Dopant Incorporation Control Using Site‐Competition CVD
2个月前
已完结
A kinetic analysis of nitrogen incorporation characteristics in 4H-SiC epitaxial layers
2个月前
已完结
Equilibrium Predictions of the Role of Organosilicon Compounds in the Chemical Vapor Deposition of Silicon Carbide
3个月前
已完结
Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures
3个月前
已完结
Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers
3个月前
已完结
SiC Dopant Incorporation Control Using Site‐Competition CVD
3个月前
已关闭
Improvement of Quality of Thick 4H-SiC Epilayers
3个月前
已完结
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