Lv6
2041 积分 2024-10-11 加入
High-mobility holes in gallium nitride and their quantum oscillations
28天前
已完结
High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
28天前
已完结
Sub-3 V monolithic integration of GaN-based micro-LEDs with p -MOSFETs
1个月前
已关闭
Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress
1个月前
已完结
Ultra-Wide Bandgap AlxGa1-xN Channel Transistors
2个月前
已关闭
Ultra-wide band gap AlGaN polarization-doped field effect transistor
3个月前
已完结
AlN metal–semiconductor field-effect transistors using Si-ion implantation
3个月前
已完结
Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity
3个月前
已完结
High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates
3个月前
已完结
An AlN/Al0.85Ga0.15N high electron mobility transistor
3个月前
已完结
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