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1701 积分 2024-10-11 加入
An AlN/Al0.85Ga0.15N high electron mobility transistor
9天前
已完结
Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)
29天前
已完结
Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors
30天前
已完结
Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures
30天前
已完结
High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
30天前
已完结
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
30天前
已完结
Impacts of different thickness Al2O3 and SiO2 atomic layer deposition sidewall passivation for GaN-based micro-LEDs
1个月前
已完结
Drive Matrix and Integration Technology in Emerging Micro‐LED Display
3个月前
已完结
High Performance of Monolithically Integrated GaN Micro‐LED With p‐MOSFET: Advancing Toward Active Matrix Micro‐LED Displays
5个月前
已完结
InGaN micro-LED array with integrated emission and detection functions for color detection application
5个月前
已完结
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