Lv61
2371 积分 2024-10-11 加入
High-BFOM GaN p-channel MOSFETs enabled by ALD Ga2O3 gate dielectric
9天前
已关闭
Achieving low ON-resistance in E-mode regrown U-shaped p-GaN gate multi-channel HEMT
9天前
已完结
Achieving an ultra-thin GaN channel layer in AlGaN/GaN/AlN high electron mobility transistors
3个月前
已关闭
High-mobility holes in gallium nitride and their quantum oscillations
4个月前
已完结
High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
4个月前
已完结
Sub-3 V monolithic integration of GaN-based micro-LEDs with p -MOSFETs
4个月前
已关闭
Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress
5个月前
已完结
Ultra-Wide Bandgap AlxGa1-xN Channel Transistors
6个月前
已关闭
Ultra-wide band gap AlGaN polarization-doped field effect transistor
7个月前
已完结
AlN metal–semiconductor field-effect transistors using Si-ion implantation
7个月前
已完结
皖公网安备34019202002308
