Lv12
46 积分 2026-08-31 加入
Behavior of oxide regrowth during the selective Si3N4 etching process on 3D NAND structures using finite element computational simulations
4小时前
已完结
Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication
4小时前
已完结
Effect of addition of amino acids with hydrophilic side chains to low-concentration H3PO4 for improvement of Si3N4 etching kinetics and oxide regrowth phenomena on multi-layered Si3N4/SiO2 structures
4小时前
已完结
Surface passivation of HfO2 by silane coupling agents for ultra‑high selectivity etching of Si3N4/SiO2/HfO2 stacks in phosphoric acid
4小时前
已完结
Redeposition mechanism on silicon oxide layers during selective etching process in 3D NAND manufacture
4小时前
已完结
Improvement of Si3N4/SiO2 etching selectivity through the passivation of SiO2 surface in aromatic carboxylic acid-added H3PO4 solutions for the 3D NAND integration
4小时前
已完结
Progress report on high aspect ratio patterning for memory devices
4小时前
已完结
A Review of TDDB Reliability in 45-nm PDSOI FETs: Effects of Cryogenic Operation, AC Stress, and Layout Variations
21天前
已完结
Redeposition mechanism on silicon oxide layers during selective etching process in 3D NAND manufacture
1个月前
已完结
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