| 标题 |
Dual-gate Hf-doped InZnO field-effect transistors with sub-0.1 V threshold voltage shift under bias stress |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Vacuum Science & Technology B 作者:Tiaoyang Li; Rongling Hu 出版日期:2026-04-16 |
| 求助人 | |
| 下载 |
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(2025-6-4)