Lv21
150 积分 2022-12-01 加入
Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo
1小时前
已完结
Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor
2小时前
已完结
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
2天前
已完结
DRAM technology perspective for gigabit era
2天前
已完结
Study and Analysis of Retention Time and Refresh Frequency in 1T1C DRAM at Nanometer Regime
2天前
已完结
Suppression of interfacial layers in ZrO 2 /TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAM
17天前
已关闭
Enhancing remnant polarization in ferroelectric Hf 0.5 Zr 0.5 O 2 thin films by oxygen-diffusive interlayers
1个月前
已完结
Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study
2个月前
已完结
Electrical Conduction Mechanisms in Metal–Insulator–Metal (MIM) Structure with TiO x N y Thin Films Deposited with Different O/N Ratios
2个月前
已完结
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties
2个月前
已完结
皖公网安备34019202002308
