| 标题 |
Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Alloys and Compounds 作者:Iwan Susanto; Ken-Yuan Kan; Ing-Song Yu 出版日期:2017-06-24 |
| 求助人 | |
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(2025-6-4)