| 标题 |
Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Shun Lu; Manato Deki; Takeru Kumabe; Jia Wang; Kazuki Ohnishi; et al 出版日期:2023-04-03 |
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(2025-6-4)