| 标题 |
Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing |
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| DOI | |
| 其它 |
期刊:Science China Information Sciences 作者:Chaewon Youn; Sungjun Kim 出版日期:2025-09-23 |
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(2025-6-4)