| 标题 |
Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Qingzhong Gui; Wei Yu; Chunmin Cheng; Hailing Guo; Xiaoming Zha; et al 出版日期:2023-11-01 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)