| 标题 |
Low-pressure CVD grown Si-doped β-Ga2O3 films with promising electron mobilities and high growth rates |
| 网址 | |
| DOI | |
| 其它 | https://doi.org/10.1063/5.0245559 |
| 求助人 | |
| 下载 |
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(2025-6-4)