| 标题 |
Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon |
| 网址 | |
| DOI | |
| 其它 |
期刊:Scripta Materialia 作者:Kun-Lin Lin; Fa-Yan Lee; Yi-Meng Chen; Yu-Jen Tseng; Hung-Wei Yen 出版日期:2024-03-01 |
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(2025-6-4)